t-1 package pin photodiode MID-30A12 description package dimensions the MID-30A12 is a pin photodiode mou- nted in a lensed , special dark plastic package.the lens- ing effect of the package allows an acceptance half view angle of 10 that is measured from the optical axis to the half power point . features l high photo sensitivity l low junction capacitance l hight cut-off frequency l fast switching time l good spectral matching ired ( l p=940nm) type. absolute maximum ratings @ t a =25 o c parameter maximum rating unit power dissipation 100 mw reverse break down voltage 30 v operating temperature range storage temperature range lead soldering temperature 02/04/2002 -55 o c to +100 o c -55 o c to +100 o c 260 o c for 5 seconds notes : 1. tolerance is 0.25 mm (.010") unless otherwise noted. 2. protruded resin under flange is 0.8 mm (.031") max. 3. lead spacing is measured where the leads emerge from the package. unit : mm (inches ) unity opto technology co., ltd. 2.54 nom. (.100) c a 0.50 typ. (.020) 1.00 (.040) see note 2 3.00 (.118) 1.00min. (.040) 23.40min. (.920) 5.25 (.207) 0.800.50 (.031) flat denotes cathode 4.00 (.157) see note 3
MID-30A12 optical-electrical characteristics @ t a =25 o c parameter test conditions symbol min. typ. max. unit reverse break down voltage i r =100 m a ee=0 reverse dark current v r =10v ee=0 open circuit voltage l =940nm ee=0.1mw/cm 2 rise time v r =10v l =940nm tr 40 nsec fall time r l =1k w tf 30 light current v r =5v, l =940nm ee=0.1mw/cm 2 total capacitance v r =3v, f=1mh z ee=0 half acceptance angle v r =5v ee=0.1mw/cm 2 typical optical-electrical characteristic curves 02/04/2002 v (br)r 30 v i d 30 na v oc 350 mv i l 1 4 m a c t 15 pf deg. 2 q 1/2 25 unity opto technology co., ltd. total power dissipation mw 0 50 100 150 200 0 20 40 60 80 100 ambient temperature - o c fig.3 total power dissipation vs. ambient temperature 0.1 1 10 100 1000 0 20 40 60 80 100 ambient temperature - o c fig.4 dark current vs ambient temperature v r =10, ee=0 mw/cm 2 capacitance c - pf reverse voltage- v r fig.2 capacitance vs. reverse voltage f=1mhz ; ee=0mw/cm 2 0 20 40 60 80 100 0.01 0.1 1 10 100 0 1000 2000 3000 4000 0 5 10 15 20 reverse voltage - o c fig.1 dark current vs reverse voltage tamb=25 o c, ee=0 mw/cm 2 dark current i r - pa dark current i r - na
MID-30A12 typical optical-electrical characteristic curves 02/04/2002 unity opto technology co., ltd. l wavelength (nm) fig.5 relative spectral sensitivity vs. wavelength 0.01 0. 1 1 10 irradiance ee (mw/cm 2 ) fig.6 photocurrent vs. irradiance = 950 nm photocurrnet ip - m a 0.1 1 10 100 1000 0.5 0.3 0.1 0.2 0.4 0.6 1.0 0.9 0.8 0 10 20 fig.7 sensitivity diagram 30 40 50 60 70 80 90 relative response 0 20 40 60 80 100 700 800 900 1000 1100 1200
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